data sheet 1 of 10 rev. 03, 2009-04-01 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! ptfa181001gl confidential, limited internal distribution description the ptfa181001gl is a 100-watt ldmos fet designed for edge and wcdma power amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally- enhanced open-cavity package with copper flange. manufactured with infineon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptf a181001gl package pg -63248-2 thermally-enhanced high power rf ldmos fet 100 w, 1805 ? 1880 mhz two-carrier wcdma drive-up v dd = 28 v, i dq = 750 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 average output power (dbm) im3 (dbc), acpr (dbc) 5 10 15 20 25 30 35 drain efficiency (%) acpr efficiency im3 rf characteristics edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 45 w (avg), ? = 1880 mhz characteristic symbol min typ max unit error vector magnitude rms evm ? 1.8 ? % modulation spectrum @ 400 khz acpr ? ?61 ? dbc modulation spectrum @ 600 khz acpr ? ?73 ? dbc gain g ps ? 16.5 ? db drain efficiency h d ? 36 ? % ptfa181001hl package pg-64248-2 features ? thermally-enhanced, plastic open-cavity (epoc?) package with copper flange, pb-free and rohs compliant ? broadband internal matching ? typical edge performance at 1880 mhz, 28 v - average output power = 45 w - linear gain = 16.5 db - efficiency = 36% - evm rms = 1.8% ? typical cw performance, 1880 mhz, 28 v - output power at p?1db = 120 w - gain 15.5 db - efficiency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability ? capable of handling 10:1 vswr @ 28 v, 100?w?(cw) output power *see infineon distributor for future availability.
data sheet 2 of 10 rev. 03, 2009-04-01 ptfa181001gl confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 100 w (pep), ? = 1850 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 16 16.5 ? db drain efficiency h d 39 41 ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.085 ? w operating gate voltage v ds = 28 v, i d = 750 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 408 w above 25c derate by 2.33 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 100 w cw) r q jc 0.43 c/w ordering information type and version package type package description shipping marking ptfa181001gl v1 pg-63248-2 thermally-enhanced, plastic tray ptfa181001gl open-cavity, slotted flange, single-ended *see infineon distributor for future availability.
data sheet 3 of 10 rev. 03, 2009-04-01 ptfa181001gl confidential, limited internal distribution edge evm and modulation spectrum vs. quiescent current v dd = 28v, ? = 1880 mhz, p out = 46.5 dbm 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0.65 0.70 0.75 0.80 0.85 0.90 quiescent current (a) evm rms (average %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz edge modulation spectrum performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz -100 -90 -80 -70 -60 -50 -40 -30 -20 37 39 41 43 45 47 49 output power (dbm) modulation spectrum (db) 5 10 15 20 25 30 35 40 45 drain efficiency (%) efficiency 400 khz 600 khz typical performance (data taken in a production test fixture) edge evm performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 0 1 2 3 4 5 6 7 8 37 39 41 43 45 47 49 output power (dbm) evm rms (average %) . 5 10 15 20 25 30 35 40 45 drain efficiency (%) evm efficiency intermodulation distortion vs. output power (as measured in a broadband circuit) v dd = 28 v, i dq = 750 ma, ? 1 =1879 mhz, ? 2 = 1880 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg. (dbm) imd (dbc) 3rd order 7th 5th
ptfa181001gl confidential, limited internal distribution data sheet 4 of 10 rev. 03, 2009-04-01 broadband cw performance (at p?1db) v dd = 28 v, i dq = 750 ma 14 15 16 17 18 19 1805 1818 1831 1844 1857 1870 1883 frequency (mhz) gain (db) 35 40 45 50 55 60 efficiency (%), output power (dbm) output power efficiency gain im3 vs. output power at selected biases v dd = 28 v, ? 1 = 1879, ? 2 = 1880 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg. (dbm) imd (dbc) 375 ma 1125 ma 750 ma typical performance (cont.) cw broadband performance v dd = 28 v, i dq = 750 ma, p out = 47 dbm 20 25 30 35 40 45 50 55 1805 1818 1831 1844 1857 1870 1883 frequency (mhz) gain (db), efficiency (%) -30 -20 -10 0 10 20 30 40 return loss (db) gain return loss efficiency power sweep v dd = 28 v, ? = 1880 mhz 14.0 14.5 15.0 15.5 16.0 16.5 17.0 36 38 40 42 44 46 48 50 52 output power (dbm) power gain (db) i dq = 1125 ma i dq = 375 ma i dq = 750 ma
ptfa181001gl confidential, limited internal distribution data sheet 5 of 10 rev. 03, 2009-04-01 gain & efficiency vs. output power v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 12 13 14 15 16 17 18 36 38 40 42 44 46 48 50 52 output power (dbm) gain (db) 5 15 25 35 45 55 65 drain efficiency (%) efficiency gain is-95 cdma performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 0 5 10 15 20 25 30 35 40 33 35 37 39 41 43 45 47 output power (dbm), avg. drain efficiency (%) -80 -70 -60 -50 -40 -30 -20 -10 adj. ch. power ratio (dbc) efficiency acp f c ? 0.75 mhz acpr f c + 1.98 mhz t case = 25c t case = 90c typical performance (cont.) output power (at 1 db compression) vs. supply voltage i dq = 750 ma, ? =1880 mhz 49.5 50.0 50.5 51.0 51.5 52.0 24 26 28 30 32 supply voltage (v) output power (dbm) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.15 a 0.44 a 0.73 a 1.10 a 2.20 a 3.30 a 4.41 a 5.51 a
data sheet 6 of 10 rev. 03, 2009-04-01 ptfa181001gl confidential, limited internal distribution 0.1 0.3 0.2 0 . 1 0 . 2 < - - 0 . 0 z load z source 1805 mhz 1880 mhz 1880 mhz 1805 mhz broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 1805 5.02 ?6.23 1.52 ?3.98 1830 4.91 ?6.10 1.49 ?3.97 1850 4.82 ?6.13 1.47 ?3.79 1860 4.78 ?6.20 1.46 ?3.75 1880 4.70 ?6.36 1.44 ?3.67 see next page for reference circuit z 0 = 50 w
data sheet 7 of 10 rev. 03, 2009-04-01 ptfa181001gl confidential, limited internal distribution reference circuit reference circuit schematic for ? = 1880 mhz circuit assembly information dut ptfa181001gl ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 1880 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.322 l , 50.0 w 27.43 x 1.37 1.080 x 0.054 l 2 0.172 l , 38.0 w 14.73 x 2.16 0.580 x 0.085 l 3 0.016 l , 11.4 w 1.27 x 10.16 0.050 x 0.400 l 4 0.024 l , 60.0 w 2.24 x 0.99 0.088 x 0.039 l 5 0.273 l , 60.0 w 24.00 x 0.99 0.945 x 0.039 l 6 0.019 l , 6.9 w 1.52 x 17.78 0.060 x 0.700 l 7 0.044 l , 6.9 w 3.43 x 17.78 0.135 x 0.700 l 8, l 9 0.298 l , 52.0 w 26.16 x 1.27 1.030 x 0.050 l 10 0.039 l , 4.9 w 3.10 x 25.65 0.122 x 1.010 l 11 (taper) 0.037 l , 4.9 w / 10.3 w 2.92 x 25.65 / 11.43 0.115 x 1.010 / 0.450 l 12 (taper) 0.033 l , 10.3 w / 41.2 w 2.79 x 11.43 / 1.91 0.110 x 0.450 / 0.075 l 13 0.055 l , 41.2 w 4.70 x 1.91 0.185 x 0.075 l 14 0.058 l , 41.2 w 4.95 x 1.91 0.195 x 0.075 l 15 0.327 l , 50.0 w 28.98 x 1.37 1.141 x 0.054 1 electrical characteristics are rounded. r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v r4 2k v r1 1.2k v c9 10pf l 1 r9 10 v dut j1 l 5 c6 1f c5 0.1f c4 10f 35v c7 0.01f r8 2k v c8 10pf r7 5.1k v c10 0.6pf c12 1f c11 10pf c13 10f 50v c20 1.5pf c19 1.5pf c14 10f 50v c16 1f c15 10pf c17 10f 50v c18 10f 50v l2 c22 10pf c21 0.8pf l 2 l 3 l 6 l 10 l 11 l 12 l 13 l 14 l 15 l 7 l 4 l 8 l 9 r6 5.1k v v dd j2 l1 v66100-g9222-d683-01-7606.dwg
data sheet 8 of 10 rev. 03, 2009-04-01 ptfa181001gl confidential, limited internal distribution reference circuit assembly diagram* (not to scale) reference circuit (cont.) rf_out a181001ghl_cd_11-12-08 v dd r5 c9 r9 r8 c15 c8 rf_in l1 c11 c12 c19 c21 c20 c22 c16 c17 c18 c13 c14 c5 r6 r7 c4 c6 c7 l2 r4 q1 qq1 c3 c1 c2 r1 r3 r2 v dd c10 component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c12, c16 capacitor, 1.0 f atc 920c105 c7 capacitor, 0.01 f atc 200b 103 c8, c9, c11, c15, c22 ceramic capacitor, 10 pf atc 100b 100 c10 ceramic capacitor, 0.6 pf atc 100b 0r6 c13, c14, c17, c18 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c19, c20 ceramic capacitor, 1.5 pf atc 100b 1r5 c21 ceramic capacitor, 0.8 pf atc 100b 0r8 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2k ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3k ohms digi-key p1.3kgct-nd r3, r8 chip resistor, 2k ohms digi-key p2kect-nd r4 potentiometer, 2k ohms digi-key 3224w-202etr-nd r5, r9 chip resistor, 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1k ohms digi-key p5.1kect-nd *gerber files for this circuit available on request
data sheet 9 of 10 rev. 03, 2009-04-01 ptfa181001gl confidential, limited internal distribution package outline specifications package pg-63248-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 5. gold plating thickness: < 0.254 micron [< 10 microinch] 6. tabs may protrude 0.13 [.005] max from body. 7. pins: d = drain, s = source, g = gate. c l 0.064 (.0025) ?a? c l 4.830.51 [.190.020] c l pg-68248-2(g)_po_8-28-08 20.27 [.798] 34.04 0.08 [1.340 .003] 3x r0.51 +1.14 ?0.25 [r.020 ] +.045 ?.010 45 x 2.72 [45 x .107] 45 x 1.78 [45 x .070] 6. 2x r1.63 [r.064] 9.78 0.08 [.385 .003] 3.63 +0.25 ?0.13 [.143 ] +.010 ?.005 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 10 of 10 rev. 03, 2009-04-01 ptfa181001gl v1 confidential, limited internal distribution revision history: 2009-04-01 data sheet previous version: 2009-02-19, data sheet page subjects (major changes since last revision) 9, 10 update package information. goldmos ? is a registered trademark of infineon technologies ag. edition 2009-04-01 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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